Study of the optoelectronic properties of the low nitrogen density Sidoped GaAsN/GaAs alloy/
Author
Al Garni, Muneerah Nemshan Manaa.
Abstract
During this work, we have studied the structural and optoelectronic properties of an epilayer of GaAsN grown by molecular beam epitaxy on GaAs substrate. The X-ray diffraction has been used to determine the nitrogen content in the studied sample and it had been found to be 1.2%. The optoelectronic properties of this sample's structure has been studied by the mean of the CW-photoluminescence and time-resolved photoluminescence. The CW-PL spectrum consists of two peaks. The principal one is located at 1.303eV, associated with the band to band transition. This transition is confirmed by a numerical calculation of the band gap based on the anti-crossing model. The second peak, located at 1.162eV, is associated to a deep energy level(within the band gap)..
